ABSTRACT
Magnesium silicide (Mg2Si) in the antifluorite structure has been suggested as a thermoelectric material for future generations of thermoelectric generators operating at mid-high-temperatures. This chapter examines Antimony, the most promising n-type impurity for Mg2Si and look for ways to transfer this to a practical production process. Chemical etching of Mg2Si is one of the important process technologies needed to push forward toward industrial production. Specimens with other combinations of doping concentration have ZT values from 1.1 to 1.2, where it is worth pointing out that the ZT values achieved here are for specimens prepared using mass-produced source materials and production-type work flows. However, the peripheral technologies, such as the formation of low contact resistance electrodes, durable electrode material, the degradation tolerance, passivation coatings, relevant soldering for midtemperature operation, thermal flow control, thermal impedance matching, electrical impedance matching, direct current (DC)-DC convertor matching, and so on also need to be developed.
