ABSTRACT
This chapter discusses the analysis of complementary metal oxide semiconductor field-effect-transistors (CMOS FET), which are essential for switching functions in radio frequency (RF)/mmW integrated circuits (ICs). It also discusses the analysis and design of the most adopted single-pole double-throw (SPDT) switch topology. N-poles M-throws (NPMT) designs can be easily migrated from SPDT design skills. Switch transistors are placed in series at each end of the auxiliary coupled-line. The chapter introduces a new switch topology named magnetic switchable artificial resonator. It is clear that due to superior transistor performance, the switches in hetero-junction bipolar transistor (HBT) and silicon-on-insulator (SOI) generally have better insertion loss and isolation. For the CMOS switches, conventional lg/4 topology is good at frequencies around 60-110 GHz, while the switches based on magnetically switchable artificial resonator topology are better suitable for frequency beyond 110 GHz.
