ABSTRACT
This chapter discusses the design and fabrication of 1200 V/40A SiC Schottky diode, which can work at a high temperature of 250°C are introduced, and the blocking and conducting performance at different temperatures are analyzed. The leakage current of the 1200 V/40A SiC JBS diode was less than 1 µA at the reverse voltage of 1200 V at room temperature, which increased to 250 µA at 1200 V at 250° C. For the 1200 V SiC JBS diode, the total width of the Floating Field Limiting Ring termination area is about 50 µm, the single ring width is about 2.5 µm, and the ring spacing increases gradually from inside to outside. The process of SiC JBS diode mainly includes lithography, ion implantation, etching, oxidation, passivation, and metal lift off. To obtain the high-temperature characteristics of the SiC JBS diodes, special designed heating equipment was used to heat the devices.
