ABSTRACT
This chapter presents various challenges faced by conventional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) under sub-10 nm era and advantages of carbon nanotubes (CNTs) which make them suitable option for channel in MOSFET resulting in a new device concept called Carbon Nanotubes Field Effect Transistor (CNTFET). A basic introduction is provided about CNTs, types of CNTs and its extensive properties. Furthermore a general introduction to CNTFETs, types of CNTFETs and application of CNTFET for low power Static Random Access Memory (SRAM) cell design. In this chapter we study of 6T SRAM cell and compare their performance parameters between 16 nm Complementary Metal Oxide Semiconductor (CMOS) technology and CNTFET. The SRAM design uses the tiniest transistors probable and is more over prone to reliability problems and process variations; for comparing the two technologies SRAM design became a bench mark circuit. This comparative study in future would absolutely help us select improved technology.
