ABSTRACT
This chapter presents an up-to-date review of the several models commonly used to reproduce the current-voltage characteristics of the organic thin-film transistors (OTFTs). It features the different model formulations used for organic thin-film transistors. The chapter presents the derivation of the analytical expression of the drain current in the linear and saturation regimes by the systematic model that is currently used, which is called the Sze model. It describes the organic thin-film transistors have been theoretically studied and modeled, focusing particularly on the different analytical models of the electrical characteristics of the devices. The chapter introduces the general standard model that describes current-voltage equations in thin-film transistors, focusing on the geometry and properties of the active layer materials. It also examines a detailed description of the various manufacturing steps that we used to fabricate OTFTs as well as the electrical characterization step.
