ABSTRACT
This chapter dedicates to the fundamental understanding and operating principles of the aforementioned spintronic memory and logic devices. It describes the configuration of domain wall (DW) types that are stable in ferromagnets as well as their dynamics under magnetic field and current along with their possible applications in memory devices. The spin-orbit torque effect has opened a new avenue for the manipulation of magnetization by in-plane current, inspiring the proposals for novel and efficient spintronic devices. In the case of giant magnetoresistance, the spin-dependent scattering of electrons results in different resistances for parallel and antiparallel magnetization orientations of the two ferromagnetic layers, which is explained by Mott’s two-current model. Tunneling magnetoresistance ratio (TMR) is a parameter to measure transport property of magnetic tunnel junctions with ferromagnet/insulator/ferromagnet trilayers. A large TMR value provides a larger signal to separate out the high and low resistance states.
