RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit Applications *

This chapter introduces the resistive random-access memories (RRAM) as one of the potential candidates for non-volatile memories (NVM) and their circuit applications. One specific type of RRAM devices (Ta₂O₅/TaO_x bi-layered RRAM) is explored as a case study to highlights the underlying physics behind RRAM technology and to get better insight into its operating mechanism. The physics-based mathematical and the circuit models of the Ta₂O₅/TaO_x bi-layered RRAM are investigated and the equations and the simulation results obtained from these models are reproduced in this chapter. The results from the these models, supported by the experimental data and using fundamentals of physics and the physical characteristics of the RRAM cell are used to provide deep theoretical discussions and getting better insight into the current conduction (static behavior) and the resistive switching (dynamic behavior) mechanisms of the bi-layered RRAM devices. By the end of the chapter, it will also be shown the steps to develop a RRAM SPICE model using an available mathematical/analytical model and using the developed SPICE model to explore the integration capability of RRAM with the CMOS technology by simulating a non-volatile D-Latch circuit.