ABSTRACT
A memristor is basically a resistor accompanied by memory. The brain can be developed with the help of implementing a memristor in an analog circuit since the memristor can also be used as synapses of neurons. In 1971, Leon Chua had defined a relation and propounded a new nonlinear device called memristor in short. The voltage threshold adaptive memristor model is developed to fulfill the threshold voltage conditions required by many logic circuits and memory applications. A memristor is classified in three parts as filament-type memristor, barrier-type memristor, and ferroelectric memristor. The barrier-type memristor also can be formed as a Schottky barrier-type memristor in which one interface is formed by joining the metal and oxide, also known as ohmic-metal junction; another interface is Schottky barrier, also known as Schottky-metal. In the barrier-type memristor, the interpolation of the barrier is done by redistribution of the oxygen vacancies.
