ABSTRACT
This chapter begins with an analysis of the basic principles of operation of the vertically diffused metal oxide semiconductor field effect transistor (MOSFET) (VDMOSFET) structure. It describes the DC characteristics of the structure such as off-characteristics, on-characteristics, and transfer characteristics. The chapter examines the silicon carbide-based power VDMOSFET structure has been critically. It reviews the operating principle of the shielded VDMOSFET structures. Without adding a gate bias, a high voltage can be supported in the vertical diffused MOSFET structure when a positive bias is applied to the drain. The relative magnitude of the channel mobility on the performance of the VDMOSFET depends upon the drift region resistance, which is a function of the breakdown voltage of the device. The threshold voltage of the power MOSFET is an important design parameter from an application point of view. The band bending required to create a channel in the accumulation-mode planar MOSFET is much smaller than required for the inversion mode device.
