ABSTRACT
Data has been reported on the analog performance of full silicon devices, silicon-based nanowire TFETs with different source compositions and line-Tunnel field-effect transistor (FET) (TFET). Although the tunnel-FET devices were developed for digital applications, some researchers have demonstrated their potential for analog circuit design. However, it is not only the transconductance value that increases with the increasing germanium percentage at the source; the output conductance also increases because the lower is the source bandgap, the more dominated by the band-to-band-tunneling (BTBT) mechanism is the device behavior and, therefore, it becomes more dependent on the drain voltage. Low-frequency (LF) noise is an important parameter for the analog performance of solid-state devices and circuits. This chapter selects two essential analog applications, namely current mirrors and differential pairs, in order to show the impact of designing analog circuits with TFET devices. A differential pair circuit is obtained with two transistors connected to a common node and biased with a fixed current source.
