ABSTRACT
In this chapter, dual metal – double gate (DM – DG) doping less tunnel field effect transistor (TFET) is presented to overcome the challenges in doping less TFET. The proposed device utilizes dual gate of two metals having different work functions. The work function of metal nearest to the source–channel junction is relatively lower than the other metal. This lowers the potential barrier at tunneling junction when gate bias voltage is applied. The device performance is evaluated using 2-D simulations under various values of gate voltage and doping concentrations. We demonstrate using 2–D TCAD simulations that the proposed DM – DG doping less TFET exhibits a higher on – current (~100 times), a steeper sub-threshold swing (22 mV/ decade) and low threshold voltage (0.30 V) as compared to the conventional doping less TFET.
