ABSTRACT
This chapter deals with the microscopic phenomena occurring during epitaxial graphene growth on SiC by high-temperature annealing. It discusses recent experimental and theoretical findings on the silicon (Si) diffusion in the Silicon carbide (SiC) matrix and on the kinetics of graphene growth as a function of temperature and time. The chapter explores the physical basis of graphene formation, which is essential for perfect control of graphene quality, helping to define the optimal conditions for the growth of continuous monolayer or bilayer graphene on SiC. It presents the most recent results obtained in the growth of graphene on SiC, introducing a full model that accounts for the growth mechanism of multilayer epitaxial graphene by high-temperature annealing of SiC. The chapter provides a foundation to understand the kinetics of graphene growth on SiC, necessary to control the number and quality of graphene layers for technological applications.
