ABSTRACT
This chapter discusses hydrogen intercalation and the properties of the resulting quasi-freestanding graphene. It describes the structural and electronic properties of the interface layer. The chapter also discusses the basic principle of hydrogen intercalation and its practical implementation. It analyses the properties of quasi-free monolayer graphene (MLG), bilayer graphene (BLG), and trilayer graphene (TLG) on SiC(0001). The chapter presents hydrogen intercalation implemented on silicon carbide, SiC(111) substrates. It then discusses the impact of this techniques in science and technology. The chapter also describes the interface layer existing between SiC(0001) and graphene. Hydrogen intercalation is a robust technique: it is easy to reproduce in different furnaces, and the resulting samples have excellent temperature stability and are not affected by exposure to air. Epitaxial graphene (EG) on SiC remains one of the most promising platforms for the upcoming graphene-based electronics.
