ABSTRACT
This chapter reviews epitaxial graphene grown on silicon carbide (SiC) by the confinement-controlled sublimation method with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growtharresting or growth-enhancing masks. The growth of graphene by SiC decomposition is nonconventional in the sense that it does not require an external source of carbon. The chapter presents atomic force microscopy (AFM) and scanning tunneling microscopy (STM) images of few-layer graphene on the C face. Monolayer graphene is more difficult to produce due to the rapid growth rates on the C face and the multiple nucleation sites. Mainstream electronics and very large-scale integration are based on silicon; it is, therefore, important to devise schemes to integrate graphene with Si wafers. The chapter presents the schemes for large-scale integration of epitaxial graphene ribbons with Si wafer.
