ABSTRACT
This chapter focuses on molecular phenomena at the gate dielectric/channel interface because the effect of such phenomena on the Metal Oxide Semiconductor Field Effect Transistor threshold voltage. It considers two known dielectric oxides, namely silicon dioxide and zirconium dioxide. The chapter explains various modes of hydrogen transport in zirconium dioxide, which is a more complex material compared to silicon oxide. While amorphous silicon oxide is made of a single type of building block, zirconium oxide is made of various type of building blocks with zirconium participating in the structure with various coordination numbers. The modifications employed lead to a higher density/quality oxide, which closely resembles that of the gate dielectric material fabricated by thermal oxidation. Classical molecular dynamics is a method to investigate the movements and interactions of atoms within a system based on the laws of classical physics.
