ABSTRACT
One of the critical issues for the fabrication of integrated circuits (ICs) is precise design of the operation of the circuits containing huge numbers of transistors. It is quite natural to predict the device operation by computer calculations using the simulators and device models. Devices scaled down to deca-nanometer range, operating at their physical limits, put stringent requirements on the modeling and simulation of device characteristics [1]. Computer aided modeling and simulation plays a crucial role in the development and prediction of the properties of modern technologies. Because of trial manufacturing and circuit redesign, the cost of modern, highly dense ICs containing deep sub-micron devices is very high. Simulation allows visualization and better understanding of the microscopic physical phenomenon and effects taking place over very small lengths or over small periods in macroscopic dimensions. To achieve these goals, over the past twenty years, two/three-dimensional numerical technology computer aided design (TCAD) device simulation tools have evolved into awell-accepted and extremely important branch of electronic design and automation (EDA) tools. It is suitable for the analysis and characterization of semiconductor structures and devices standing alone and/or coupled in integrated circuits [2]. TCAD has already been considered an invaluable tool in the research and development of new technology at the level of semiconductor process and device design.
