ABSTRACT
The metal-oxide-semiconductor field effect transistor (MOSFET) is at the core of the design of integrated circuits, both for digital and analog applications. There is an ongoing debate over the interdependence of mobility controlled by momentum-randomizing scattering events and saturation velocity dependent on the streamlined motion of electrons. This chapter describes the mobility degradation due to the quantum confinement and also describes the charge transport driven by the longitudinal electric field that is distinctly high in nanoscale channels. It discusses MATLAB implementation to acquire the gate characteristics, subthreshold swing (SS), and drain-induced barrier lowering (DIBL). The chapter presents a MATLAB example for resistance–capacitance (RC) delay circuit. It emphasizes the distinct features in modeling the nano-MOSFET or any FET. The channel in a nanoscale MOSFET is indeed a quantum one that is constrained by the gate electric field forming an approximately linear quantum well. In the nano-MOSFET the gate oxide measures a few nanometers.
