ABSTRACT
Complementary metal oxide semiconductor (CMOS) logic by its ubiquity and versatility becomes the obvious foundation for a whole range of emerging technologies. This chapter provides a discussion on CMOS varieties: logic base–embedded dynamic random access memory (DRAM), logic base–embedded flash, high voltage, CMOS image sensor (CIS), and radiofrequency (RF) CMOS and silicon–germanium (SiGe) bipolar CMOS (BiCMOS). The distinction between DRAM-based logic and logic-based DRAM is important. Similar to DRAM-based logic, the problems with flash-based logic come down to gate oxide. High-voltage CMOS has breathed new life into more mature CMOS manufacturing lines. The rise of CIS is an area where completely new markets have been opened for CMOS technology. With a flourish of wireless applications, CMOS radios are in hot demand. Though SiGe BiCMOS offers typically better RF performance, the cost advantage of CMOS and integration capability are the key factors.
