ABSTRACT
The silicon–germanium–carbon transistor allows to maintain the transition frequency, particularly reducing the base collector capacitor and reducing the base resistance, which reduces the intrinsic noise figure of the transistor, and increases its intrinsic linearity. This chapter helps to understand the nonlinear behaviour of the heterojunction bipolar transistor (HBT). A quantitative method validating an equivalent nonlinear HBT allowed to identify the nonlinearity sources and to observe the second and third order distortion compensations. A single-ended low-noise amplifier (LNA) was chosen to minimize the duplexer losses, which is inserted at the antenna output, the substrate noise sensitivity is managed using bipolar transistors, but it is obvious that this should be an issue in case of a transmit, receive application. The LNA is simulated with its radio frequency (RF) pads including ESD protection diodes and the bonding models associated with the Printed circuit board (PCB) lines extracted with Ansoft HFSS three-dimensional (3D) field solver.
