ABSTRACT
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is today the most utilized electronic semiconductor device in the world, covering a vast range of electronic applications. Its usage ranges from simple single transistor designs to complex high-speed very large-scale integration (VLSI) circuits containing tens of millions of transistors, integrated on the same monolithic silicon die, covering a wide range of analog and digital applications. Because of its nearly ideal switching characteristics, low-fabrication costs and scaleable electronic behavior, MOSFET technologies have been and will continue to be the workhorse of the electronic industry for years to come; covering all ranges of speed, frequency, and voltage applications. With vast improvements in its switching speeds which are realized with modern semiconductor fabrication processes, MOSFET technology is now routinely used in high-speed and high-frequency analog and RF applications in lieu of other technologies traditionally used in this area, such as bipolar (BJT) transistors and III-V semiconductor technologies. It is often mentioned in the electronics design industry that “if it can be done with MOSFET technology, then it should.”
