Growth and characterization of thick Ge epilayers on Si and Silicon-on-Insulator (SOI) substrates with low temperature Ge buffers : Zhiwen Zhou

doi:10.1201/9781315226187-103

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Growth and characterization of thick Ge epilayers on Si and Silicon-on-Insulator (SOI) substrates with low temperature Ge buffers

ABSTRACT

In this paper, we reported the growth of thick Ge epilayers on Si and SOI substrates by Ultrahigh Vacuum Chemical Vapor Deposition (UHVCVD) and characterizations by Atomic Force Microscope (AFM), X-Ray Diffraction (XRD), HighResolution Transmission Electron Microscopy (HRTEM), counting Etch Pit Density (EPD) and Photoluminescence (PL) measurements.