ABSTRACT
Sneak paths are undesired current paths in a crossbar of passive memory elements. Sneak path current causes unselected devices to be written erroneously, which is a severe reliability issue. The effect of sneak paths on reading with respect to crossbar sizes has been studied extensively in the literature with various solutions being proposed to mitigate the effect. Along with the problems associated with sneak paths in crossbar structure, researchers have also proposed how to leverage them for a number of hardware-based security applications. Sneak path current is a common feature and challenge of resistive crossbar memory architectures. Investigating the properties of sneak path, during a write, a selected cell affects the unselected cell in the sneak path. A nanoelectronic resistive crossbar memory array is a popular emerging technology for future memory architectures. Resistive crossbar memory is a potential technology for nonvolatile main memory of a computer system.
