ABSTRACT
Mechanisms in spin-transfer-torque (STT) devices, created by the interactions between injected current and local magnetizations, offer new sources of entropy. In spin-transfer-torque-random access memory (STT-RAM), each cell has one magnetic tunnel junctions (MTJ) and one access transistor in series. During the registration phase, the technique compares two STT-RAM bits that are in two complementary rows for generating the response. Repeatability is ensured by writing back the corresponding complementary values to the STT-RAM bits. The stability of STT-RAM and magneto-resistive random access memory physically unclonable function (MRAM PUF) during normal operation can be affected by some factors such as thermal noise, read disturb due to multiple reads, write failure, tampering, external magnetic field. The experimental results on MTJ, domain wall memory (DWM), spin valves, have created enormous interest in spin-based computations. DWM is a promising memory technology as it can store multiple bits per cell. The DWM heads have similar sensitivity to temperature.
