ABSTRACT
This chapter presents fabrication techniques of InP-related Nanowires (NW) for light-emitting applications. It outlines the fabrication technique of heterostructures on InP NWs and describes the position-controlled growth of vertical NWs. The InP NWs are grown via the vapor–liquid–solid method, and the heterostructures are formed in the radial direction. The chapter discusses crystal growth of vertical InP NWs on silicon substrates, which provides an opportunity of expanding application field. InP-related materials are suitable for creating optical devices in near-infrared regions because of their band gap energy and variety of alloys for heterostructures. By applying the features of these materials to InP NW, small optical devices that overcome the limits of conventional film devices are expected to be developed. InP/InAs is useful as a heterostructure for light-emitting applications. The chapter describes the growth of InP-related heterostructure NWs started from the self-catalyzed growth of position-defined InP NWs on SiO2-mask-patterned silicon substrates.
