ABSTRACT
This chapter describes the growth, structure, and optical properties of InAs Nanowires (NW) via the self-catalyzed vapour–liquid–solid (VLS) mode. It presents the InP/InAs heterostructure NWs, including growth, structural and interface analysis, tuning emission wavelength by the thickness of InAs quantum disks. The chapter examines how to make the site-defined InP/InAs heterostructure NWs by self-assembled indium particle array. One crucial challenge for semiconductor NWs has been the development of a complementary metal–oxide–semiconductor-compatible synthesis approach which produces semiconductor heterostructure NWs with excellent optical and electrical properties. Interface abruptness is extremely important in heterostructures to precisely engineer the carrier distribution for functional devices. An atomically abrupt heterostructure has been generally believed to be extremely difficult to realize by bottom-up VLS synthesis mainly due to the reservoir effect. In semiconductor technology, the heterostructure in NWs is fundamentally important for both technological and physical research and has attracted much attention in relation to optoelectronic applications.
