ABSTRACT
This chapter reviews the development of III-nitride nanowire (NW) materials and NW growth and characteristics and discusses NW device applications. It outlines the growth techniques of III-nitride NWs by molecular beam epitaxy. The chapter describes the characteristics of the III-nitride NWs, where both the optical and electrical properties of the NWs. It shows that the optoelectronics device applications of the In-nitride NWs. The chapter explores epitaxy, design, fabrication, and characteristics of III-N NWs and their device applications. It focuses on III-N NW light-emitting diodes (LED), laser, and photovoltaics applications. The development of solid-state LEDs and laser diodes operating at visible wavelengths holds great promise for the development and miniaturization for a broad area of applications, such as full color mobile projectors, optical data storage, and media applications. The development of the bulk InGaN material-based visible LEDs and laser devices is largely hindered by the poor material quality.
