ABSTRACT
This chapter focuses on selective-area growth of III–V Nanowires (NW) and progress on NW-based transistor and photovoltaic devices. III–V NW are promising building blocks for future electronic and optical devices because they have the advantage of having a core–shell structure that can be used to build three dimensional devices not limited to being thin films. Silicon-based electronics and photovoltaic devices are becoming increasingly common tools in our life. The NW-channels can be formed by taking a top-down approach using etching or a bottom-up approach using NW synthesis. The field-effect transistors structures were used for characterizations of electronic properties of NW materials and for explorations of functionality in NWs rather than in studies for device applications and improvements in device performance. Among the NW materials, III–V elements are most promising materials for surrounding-gate transistor applications. III–V compound semiconductors are expected to be fast n-channel materials because of their higher electron mobility compared with bulk silicon and their small electron effective mass.
