ABSTRACT
This chapter provides an overview of the existing research on dilute III-V-Bi nanowires (NW), particularly dilute GaAsBi NWs. The development of dilute III–V bismides NWs is in the first stages because the growth of the nanostructures is a major challenge to be overcome. The chapter presents the progress in the growth and structural and optical properties of these structures. It shows that photoacoustic spectroscopy is a powerful tool to study the energy gap of semiconductor NWs. Defect formation may be limited during the growth of GaAsBi NWs due to termination mechanism at the growth front close to a side facet of wires, limiting growth-induced defects resulting from the large mismatch and miscibility gap of the constituents. Therefore, dilute bismides can be a very interesting component in novel electronic devices containing NWs. The inhomogeneity of the GaAsBi NWs has also manifested in cathodoluminescence spectra. The low eutectic temperature of Bi-Ga binary system enables the NW growth at low temperatures.
