ABSTRACT
This chapter introduces some of the experimental results of hybrid nanowires (NW) between ferromagnetic MnAs and III–V compound semiconductors, which have been demonstrated for possible magneto-nanoelectronic or spintronic device applications of the future by the author’s group. It aims to synthesize vertical ferromagnetic/semiconducting heterojunction NWs by combing the catalyst-free selective-area growth of III–V compound semiconductor NWs and the endotaxial nanoclustering of MnAs. The chapter demonstrates formation of MnAs/GaAs hybrid NWs and MnAs/ InAs heterojunction NWs. The hybrid NWs show p-type conductivity possibly owing to the formation of p-type GaAs layers near the NW surfaces caused by the thermal diffusion of manganese atoms into GaAs NWs during the endotaxial nanoclustering of MnAs. Structural characterizations in terms of the size, and position of MnAs nanoclusters (NC), and InAs NWs were carried out by scanning electronic microscopy. The growth conditions for the NCs and the atmospheric conditions after the NC growth for the observed structure were the same as those for the sample.
