ABSTRACT
Zirconium di-oxide (ZrO2) films have been deposited on ZnO/Si substrate by microwave plasma cavity discharge system. Using Metal Insulator Semiconductor (MIS) capacitor structures, the reliability and the leakage current characteristics of ZrO2 films have been studied at room and also high temperature. Poole-Frenkel current conduction mechanism is found to dominate at high temperature.
