Analysis of optical gain in a Tin-incorporated group IV alloy-based transistor laser for a mid-infrared application

In this work, we analyze the polarization-dependent TE mode optical gain in Si-Si_0.12Ge_1−y Sn_y – Si_0.11Ge_0.73Sn_0.16 based Transistor Laser (TL) with intrinsic i-Ge_1−xSn_x single Quantum Well (QW) in the base for different Sn concentrations in the well and barrier. The electronic band structure and wave function of Γ-conduction band, Heavy Hole (HH) valance band are also shown during analysis. Results show that TL works in the mid-infrared (2–4 μm) region. This analysis is helpful to develop a low-cost optoelectronics system based on group IV photonics.