ABSTRACT
This paper presents a study on Sn content dependent absorption in SiGeSn/GeSn strain balanced Quantum well. The motivation for incorporation of Tin (Sn) in Germanium is briefly narrated. Eigen energy states for different Sn concentrations are obtained for Γ valley Conduction Band (ΓCB), Heavy Hole (HH) band and Light Hole (LH) band by solving coupled Schrödinger and Poisson equations simultaneously. Sn concentration dependent absorption spectra for HH-ΓCB transition reveals that significant absorption observed in mid infrared range (3–5 μm). So, Ge1-xSnx quantum well can be used for mid infrared sensing applications.
