ABSTRACT
Recent developments in Schottky field emission scanning transmission electron microscopes now provide the ability to map changes in structure, composition and bonding that occur at materials interfaces and defects on the fundamental atomic scale. The principles of the main techniques, Z-contrast imaging and electron energy loss spectroscopy will be described here. Additionally, recent results from the analysis of II-VI and III-V quantum dots, dislocation cores in GaN and interfaces in MOSFETs will be presented.
