ABSTRACT
Vertical cavity surface emitting laser structures, with three types of AlAs/(Al)GaAs Distributed Bragg Reflectors, were grown by solid source molecular beam epitaxy. In this work we report on the cross-sectional transmission electron microscopy investigation of AlAs/(Al)GaAs interfaces. Special attention has been paid to the Bragg reflectors since they determine the electrical parameters of the devices. In order to minimise electrical resistance while keeping high reflectivity, various types of the GaAs/AlAs interfaces have been assessed. Very promising is a graded interface which decreases the electrical resistance of the device without deteriorating the reflectivity characteristics.
