ABSTRACT

The high-energy gallium ion beam used in the focused ion beam preparation of transmission electron microscopy specimens leads to formation of damage layers on the specimens. These layers significantly limit specimen quality. The origin, thickness and structure of these layers for both elemental (Si) and III-V (InP, InAs) semiconductor materials have been studied. The results obtained suggest that the formation of these layers on the sidewalls of transmission electron microscopy specimens is due to processes related to Ga implantation, rather than to redeposition of milled material.