Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy

Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10¹⁴ ions/cm². The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.