ABSTRACT
GaSb/GaAs quantum dots grown by metal organic vapour phase epitaxy were investigated with respect to their growth-correlated structural and chemical properties. The influence of the growth parameters on size and area density of the quantum dots was studied using transmission electron microscopy in plan view as well as in cross-section. The findings are in good agreement with results of atomic force microscopy and can be directly correlated to photoluminescence data. Additionally, the chemical composition was visualized using energy-filtered transmission electron microscopy.
