ABSTRACT
A new method, based on thermal annealing of a SiO2/Si structure in a CO-containing gas flow, resulted in epitaxially grown high quality 3C-SiC crystals on Si (001) without the formation of voids at the SiC/Si interface. Cross sectional TEM investigations showed that, after 3 hours annealing at 1190°C, the SiC grains had a lateral size of about 45 nm and a depth of 20 nm. Longer heat treatments resulted in larger crystals. Plan view investigations showed that the majority of crystals had a rectangular shape and well-defined orientation.
