Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD

Defect structures in In_xGa_1-xN films grown on GaN/Al₂O₃ (0001) epilayers by metal-organic chemical vapour deposition (MOCVD) were investigated by means of transmission electron microscopy. The effects of the different growth parameters on the structural properties of the samples were examined. Defects, including threading dislocations, partial dislocations and V-defects were analyzed by diffraction contrast analysis.