ABSTRACT

The use of TEM for quantification of ion implantation induced {311} defects has resulted in significant enhancement in the models used in ULSI process simulators. This paper discusses how in situ TEM studies of {311} dissolution from Si+ self-implants have been used to develop a new {311} model. The new model is based on the observed linear decay of the individual defects and the energetics of the decay process is independent of the {311} defect length. It is subsequently shown that impurities such as arsenic and phosphorus can modify the {311} formation process. Interstitial trapping by dopants is found to modify the interstitials available for {311} defect formation. The results of quantitative TEM (Q-TEM) of {311} defect evolution in the presence of As can be explained by modifying the {311} model using a simple pair binding model with a binding energy of 0.95eV. The Q-TEM results of {311} evolution in the presence of phosphorus are not as simple and a more sophisticated clustering model must be added to the {311} model to explain the TEM results.