ABSTRACT
Knowledge of the distribution of low energy ion implanted dopants in Si is extremely important for semiconductor device processing. In the present work, Z-contrast imaging and X-ray microanalytical mapping techniques have been employed to obtain implanted As distributions in Si. The results giving by both techniques are in agreement with each other and they also indicate an expected dopant diffusion profile due to annealing at high temperature. Furthermore, significant As accumulation at the oxide/crystal interface after high temperature annealing is observed. Although SIMS shows an apparently similar surface dopant peak the quantitative accuracy of this analytical method in near-surface regions with high concentrations of dopant is in question.
