ABSTRACT
The location of Ge in hexagonal SiC after Ge+ ion implantation followed by annealing at 1200°C temperatures has been investigated using the ALCHEMI method. Bloch wave calculations were made to determine zone axis orientations separating the electron excitation on interstitial and lattice sites. In a certain depth region it has been found that Ge is prefentially distributed on interstitial sites. In the same depth region, Ge-nanocrystals have been formed after annealing at 1600°C.
