ABSTRACT
We investigate the microstructure of polycrystalline silicon films formed on glass substrates by Ar+ion-laser crystallization of amorphous precursor layers. The applicability of such films for devices in large area electronics depends strongly on the grain orientation, the average grain size and the defect density and population. Electron back-scattering diffraction analysis reveals that the grains assume a width of several tens of microns. The grain boundary population is dominated by twin boundaries of first and second order or by Σ=5 gain boundaries. Experimental conditions have been found that provide preferential (001) surface normals of the grains.
