ABSTRACT
The formation process of silicon surface nanoholes is systematically investigated. We have shown that surface nanoholes are formed through three processes: 1) introduction of single surface vacancies, 2) two-dimensional agglomeration of surface vacancies via their diffusion under electron irradiation, and 3) excavation of nanoholes by the anisotropic diffusion of surface vacancies against the irradiating electrons. We have shown that both thermal and athermal diffusion of surface vacancies are essential for formation of surface nanoholes.
