ABSTRACT

SiC-SiO2 composite materials have been successfully grown by reactive magnetron co-sputtering of silica and carbon chips. The films so produced have been characterized by means of infrared (IR) absorption measurements, high resolution transmission electron microscopy (HREM) observations and X-ray diffraction (XRD) analyses. The mean size of the SiC particles is a few nanometers and is compatible with a possible quantum confinement effect.