ABSTRACT
Nitrogen ions were implanted into GaAs at high temperature and high dose in order to synthesize small Gallium nitride (GaN) crystallites. Selected area diffraction patterns show that cubic GaN was formed in samples implanted at 600°C. The precipitates formed are typically 5 nm in size and are epitaxial to the host GaAs. Some larger precipitates are also observed from which the matching of the two lattices could be determined. The implantation of nitrogen ions into GaAs is interesting for two reasons: the relatively low dose case for GaAs in which the bandgap is lowered with respect to GaAs and the high dose case, when the formation of GaN precipitates is expected after annealing. High resolution image showing the interface between GaN and GaAs. High temperature, high dose implantation of nitrogen ions into GaAs leads to the formation of cubic GaN epitaxial to the host crystal.
