ABSTRACT
Experimental patterns were compared with simulated patterns. As the thickness of the samples is of great importance, this was determined from two-beam convergent beam electron diffraction (CBED) patterns. J. Tafto and J. C. H. Spence have proposed a transmission electron microscopy in-situ technique using CBED to identify the polarity of GaAs crystals which seems much safer than the etching method. Undoped GaAs surfaces were deformed by a Berkovitch diamond pyramid using a nanohardness tester from the Centre Suisse d'Electronique et de Microtechnique. The annealing procedure Jed to a decrease in size by about 20% of the dense plastic zone generated around the indenter and to an elongation of the rosette arms coupled to a stable reorganization of the dislocations constituting the rosette arms. The annealing temperature used by the workers was intermediate between room temperature and the device process temperatures.
