ABSTRACT
Ion beam induced charge (IBIC) measurements from polycrystalline chemical vapour deposition diamond have been made at temperatures down to 200 K. IBIC microscopy uses a focused MeV ion beam to generate charge carriers in integrated circuits and semiconductor devices. The IBIC images and pulse height spectra show the presence of charge traps at crystallite boundaries resulting in a reduced charge drift length and lower charge collection efficiency. The chapter examines the IBIC measurements implemented at reduced temperatures and discusses the effects of crystallite morphology, electrical field strength and temperature on charge transport. Charge Signal Amplitude Maps at Room Temperature IBIC maps of charge collection efficiency were initially acquired from various regions of the diamond sample at room temperature in order to study the uniformity and spatial distribution of charge amplitude. Absolute charge collection efficiency of the different regions is calculated from the IBIC pulse height spectra.
