ABSTRACT
Electron beam-induced current (EBIC) imaging has long been used in the failure analysis and investigation of integrated circuits and semiconductor parameters. This chapter discusses the application of EBIC to the detection of electrostatic discharge damage in circuit input structures will be described and the contrast mechanisms. The conditions for optimized analysis, and also the possibilities for overcoming some of the theoretical limitations of EBIC, especially in terms of resolution will be explored. In fact, a more convenient way to calculate the distributions is using Monte-Carlo simulations, which can then be used to make EBIC simulations in simple geometrical cases. The actual defect consists of a faint decrease of the EBIC collection efficiency running along the centre of the diffused resistor. There is also evidence of subsidiary damage immediately to the left as a small bright area that is probably the most direct discharge path to the nearby contact window.
