ABSTRACT
This chapter presents some results achieved in scanning transmission electron microscope (STEM) at low energy, operating in bright field (BF) and dark field (DF) imaging modes, using a conventional SEM with a very simple upgrade. SEM has been used in transmission mode. The image is formed with the secondary electrons, collected by the standard detector, resulting from the conversion of transmitted electrons. Dopant profile investigation is an important issue for the semiconductor industry. The spatial distribution and the concentration of dopant atoms are key factors in understanding device operation and in validating device simulation. The low energy scanning transmission electron microscope allows the determination of a dopant profile with a resolution defined by the spot size. The benefits related to the absence of any restriction on collection angles and energy loss suggest further exploration of this method in order to test its sensitivity.
